Optical absorption enhancement of μc-SiGe:H films deposited via high pressure and high power

Abstract

Hydrogenated microcrystalline silicon-germanium (μc-SiGe:H) films are fabricated by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). The optical absorption coefficient and the photosensitivity of the μc-SiGe:H films increase dramatically by increasing the plasma power and deposition pressure simultaneously. Additionally, the microstructural properties of the μc-SiGe:H films are also studied. By combining Raman, Fourier transform infrared (FTIR) and X-ray fluoroscopy (XRF) measurements, it is shown that the Ge-bonding configuration and compactability of the μc-SiGe:H thin films play a crucial role in enhancing the optical absorption and optimizing the quality of the films via a significant reduction in the defect density.

Keywords

Optical Absorption / Defect Density / Plasma Power / Deposition Pressure / Silane Molecule

References

[1] MatsuiT, KondoM, OgataK, OzawaT, IsomuraM. Appl. Phys. Lett., 2006, 89: 142115

[2] GangulyG, IkedaT, NishimiyaT, SaitohK, KondoM, MatsudaA. Appl. Phys. Lett., 1996, 69: 4224

[3] IsomuraM, NakahataK, ShimaM, TairaS, WakisakaK, TanakaM, KiyamaS. Solar Energy Materials and Solar Cells, 2002, 74: 519

[4] YuC, JianjunZ, ChaoL, TianweiL, ZhenhuaH, JianN, ZiyangH, XinhuaG, YingZ. Solar Energy Materials and Solar Cells, 2013, 114: 161

[5] ZhangL P, ZhangJ J, ZhangX, CaoY, ZhaoY. Thin Solid Films, 2012, 520: 5940

[6] Zhang J J, Cao Y and Li T W, 2013 Advanced Optoelectronics for Energy and Environment, Wuhan China, May 25–26.

[7] CaoY, ZhangJ-J, LiT-W, HuangZ-H, MaJ, YangX, NiJ, GengX-H, ZhaoY. Journal of Optoelectronics · Lasers, 2013, 24: 924

[8] BronnebergA C, KangX, PalmansJ, JanssenP H J, LorneT, CreatoreM, van de SandenM C M. J. Appl. Phys., 2013, 114: 063305

[9] LiY, XuS Z, WeiC C, ZhaoY, ZhangX D. Physics Procedia, 2012, 32: 272

[10] HuangaJ J, ChenbY P, LienaS Y, WengaK W, ChaoC H. Curr. Appl. Phys., 2011, 11: S266

[11] GuoL, KondoM, FukawaM, SaitohK, MatsudaA. Jpn. J. Appl. Phys., 1998, 37: L1116

[12] KondoM. Solar Energy Materials and Solar Cells, 2003, 78: 543

[13] TsuR, GonzaiczJ, ChaoS S, LeeS C, TanakaK. Appl. Phys. Lett., 1982, 40: 534

[14] NiJ, ZhangJ-J, WangX-B, LiL-N, HouG-F, SunJ, GengX-H, ZhaoY. Journal of Optoelectronics· Lasers, 2010, 21: 217

[15] Grolik Benno and Kopp Joachim, Optical Properties of Thin Semiconductor Films, October, 31st, 2003.

[16] LiS-b, WuZ-m, ZhuK-p, JiangY-d, LiW, LiaoN-m. Journal of Optoelectronics · Lasers, 2008, 19: 352

[17] CardonaM. Phys. Status Solidi B, 1983, 118: 463

[18] KosarevA, TorresA, HernandezY. Materials Research Society, 2006, 21: 88