Room temperature ferromagnetism of nonmagnetic element Ca-doped LiNbO₃ films

Abstract

The nonmagnetic element Ca-doped LiNbO₃ films were prepared on Si (111) substrates by radio frequency (RF) magnetron sputtering technique. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) indicate that the Ca atoms enter the LiNbO₃ lattice in the form of Ca²⁺ ions. Superconducting quantum interference device (SQUID) results show that the Ca-doped LiNbO₃ films have room-temperature ferromagnetism and a maximum saturation magnetization of 4800 A/m at the 3% of Ca atom doping concentration. The room temperature ferromagnetism of the Ca-doped LiNbO₃ films can be attributed to the occurrence of vacancies due to Ca doping and is the intrinsic property.

Keywords

Superconducting Quantum Interference Device / Room Temperature Ferromagnetism / Metallic Calcium / Nonmagnetic Element / Sensitivity Factor Method

References

[1] BibesM, BarthelemyA. Nat. Mater., 2008, 7: 425

[2] NagaoN, IijimaK. Vacuum, 2009, 83: 1132

[3] CatalanG, ScottJ F. Adv. Mater., 2009, 21: 2463

[4] HillN A, FilippettiA. J. Magn. Magn. Mater., 2002, 242: 976

[5] RameshR, SpaldinN A. Nat. Mater., 2007, 6: 21

[6] ScottJ F. Science, 2007, 315: 954

[7] HillN A. J. Phys. Chem. B., 2000, 104: 6694

[8] FiebigM. J. Phys. D: Appl. Phys., 2005, 38: 123

[9] JiR, ZuoC, LiuJ. Journal of Optoelectronics·Laser, 2010, 21: 1337

[10] XiaoQ, AnY, LiX, XuL, WuY, DuanL, LiuJ. Journal of Optoelectronics ·Laser, 2011, 22: 1667

[11] SongC, WangC Z, YangY C, LiuX J, ZengF, PanF. Appl. Phys. Lett., 2008, 92: 262901

[12] SongC, WangC, LiuX, ZengF, PanF. Cryst. Growth Des., 2009, 9: 1235

[13] ChenC, ZengF, LiJ H, ShengP, LuoJ T, YangY C. Thin Solid Films, 2011, 520: 764

[14] ShengP, ZengF, TangG S, PanF, YanW S, HuF C. J. Appl. Phys., 2012, 112: 033913

[15] WeisR S, GaylordT K. Applied Physics A, 1985, 37: 191

[16] LiuY, GuT, WangY, WengX, WuZ. Catalysis Communications, 2012, 18: 106

[17] AufrayM, MenuelS, FortY, EschbachJ, RouxelD, VincentB. J. Nanosci. Nanotechnol., 2009, 9: 4780

[18] YanS, GeS, ZuoY, QiaoW, ZhangL. Scripta Mater., 2009, 61: 387

[19] YanS M, GeS H, QiaoW, ZuoY L, XuF, XiL. J. Magn. Magn. Mat., 2011, 323: 264

[20] HuZ, LiM, YuB, PeiL, LiuJ, WangJ, ZhaoX. J. Phys. D: Appl. Phys., 2009, 42: 185010

[21] CaoE, ZhangY, QinH, ZhangL, HuJ. Physica B, 2013, 410: 68

[22] Díaz-MorenoC, FariasR, MaciasA H-, Elizalde-GalindoJ, Hernandez-PazJ. J. Appl. Phys., 2012, 111: 07D907

[23] ZhangY, HuJ, LiuH, QinH. Transactions on Magnetics, 2011, 47: 2916