Synthesis and photoluminescence properties of wash-board belt-like ZnSe nanostructures

Abstract

Washboard belt-like zinc selenide (ZnSe) nanostructures are successfully prepared by a simple chemical vapor deposition (CVD) technology without catalyst. The phase compositions, morphologies and optical properties of the nanostructures are investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) spectroscop, respectively. A vapor-liquid mechanism is proposed for the formation of ZnSe belt-like structures. Strong PL from the ZnSe nanostructure can be tuned from 462 nm to 440 nm with temperature varying from 1000 °C to 1200 °C, and it is demonstrated that the washboard belt-like ZnSe nanostructures have potential applications in optical and sensory nanotechnology. This method is expected to be applied to the synthesis of other II–VI groups or other group’s semiconducting materials.

Keywords

ZnSe / Zinc Selenide / Typical Scanning Electron Microscope Image / Chemical Vapor Deposi / Short Nanorods

References

[1] SuQ, LiL, LiS, ZhaoH. Materials Letters, 2013, 92: 338

[2] FengG, YangC, ZhouS. Nano Lett., 2013, 13: 272

[3] HaoJ, ZhengJ, WangC, XuZ, WuG, CaoC. Journal of Optoelectronics ·Laser, 2012, 23: 1780

[4] LieberC M. Nano Lett., 2002, 2: 81

[5] LiW, HanY, LuoY. Journal of Optoelectronics ·Laser, 2013, 23: 1042

[6] BjörkM T, OhlssonB J, SassT, PerssonA I, ThelanderC, MagnussonM H, DeppertK, WallenbergL R, SamuelsonL. Nano Lett., 2002, 2: 87

[7] XiongS, ShenJ, XieQ, GaoY, TangQ, QianY T. Adv. Funct. Mater., 2005, 15: 1787

[8] ChenL, ZhangW, FengC, YangZ, YangY. Ind. Eng. Chem. Res., 2012, 51: 4208

[9] JiangF, MuscatA J. Langmuir, 2012, 28: 12931

[10] ChenL, LaiJ S, FuX N, SunJ, YingZ F, WuJ D, LuH, XuN. Thin Solid Films, 2013, 529: 76

[11] YehC-Y, LuZ W, FroyenS, ZungerA. Phys. Rev. B, 1992, 46: 10086

[12] WagnerR S, EllisW C. Appl. Phys. Lett., 1964, 4: 89

[13] DuanX, LieberC M. J. Am. Chem. Soc., 2000, 122: 188

[14] MaC, MooreD, LiJ, WangZ L. Adv. Mater., 2003, 15: 228

[15] FujitaS, MimotoH, NoguchiT. J. Appl. Phys., 1979, 50: 1079

[16] KludeM, HommelD. Appl. Phys. Lett., 2001, 79: 2523

[17] MazherJ, BadweS, SengarR, GuptaD, PandeyRK. Physica E, 2003, 16: 209

[18] LiQ, GongX, WangC, WangJ, IpK, HarkS. Adv. Mater., 2004, 16: 1436

[19] ZhangX T, IpK M, LiuZ, LeungY P, LiQ, HarkS K. Appl. Phys. Lett., 2004, 84: 2641

[20] LiX Z, LiF B, YangC L, GeW K. J. Photochem. Photobiol. A, 2001, 141: 209

[21] YuJ-G, YuH-G, ChengB, ZhaoX-J, YuJ C, HoW-K. J. Phys. Chem. B, 2003, 107: 13871