Morphology of CIGS thin films deposited by single-stage process and three-stage process at low temperature

Abstract

Cu(In,Ga)Se₂ (CIGS) thin films are prepared by a single-stage process and a three-stage process at low temperature in the co-evaporation equipment. The quite different morphologies of CIGS thin films deposited by two methods are characterized by scanning electron microscopy (SEM). The orientation of CIGS thin films is identified by X-ray diffraction (XRD) and Raman spectrum, respectively. Through analyzing the film-forming mechanisms of two preparation processes, we consider the cause of such differences is that the films deposited by three-stage process at low temperature evolve from Cu-poor to Cu-rich ones and then back to Cu-poor ones. The three-stage process at low temperature results in the CIGS thin films with the (220)/(204) preferred orientation, and the ordered vacancy compound (OVC) layer is formed on the surface of the film. This study has great significance to large-scale industrial production.

Keywords

CuInSe / Solar Energy Material / IEEE Photovoltaic Specialist / GaAs Solar Cell / 17th European Photovoltaic Solar

References

[1] R. Zwanenburg and M. Kroon, Requirements for Thin Film Solar Arrays and the Development Status of a New Solar Cell Blanker Concept, Proc. Seventh European Space Power Conference, 2005.

[2] BurgessR M, DevaneyW E, ChenW S. Perforamnce Analysis of CuInSe₂ and GaAs Solar Cells Aboard the LIPS-III Flight Boeing Lightweight Panel23rd IEEE Photovoltaic Specialists Conference, 1993, 1465

[3] RepinsI, ContrerasM A, EgaasB, DehartC, ScharfJ, PerkinsC L, ToB, NoufiR. Prog. Photovolt: Res. Appl., 2008, 16: 235

[4] JacksonP, HariskosD, LotterE, PaetelS, WuerzR, MennerR, WischmannW, PowallaM. Progress in Photovoltaics: Research and Applications, 2011, 19: 894

[5] ChirilăA, GuettlerD, BloeschP, NishiwakiS, SeyrlingS, BuechelerS, VermaR, PianezziF, RomanyukY E, BilgerG, ZiltenerR, BremaudD, TiwariA N. Optimization of Composition Grading in Cu(In,Ga)Se₂ for Flexible Solar Cells and Modules, 35th IEEE Photovoltaic Specialists Conference, 2010, 656

[6] ChirilĂA, BuechelerS, PianezziF, BloeschP, GretenerC, UhlA R, FellaC, KranzL, PerrenoudJ, SeyrlingS, VermaR, NishiwakiS, RomanyukY E, BilgerG, TiwariA N. Nature Materials, 2011, 10: 857

[7] ContrerasM A, TuttleJ, TennantA, RamanathanK, AsherS, FranzA, KeaneJ, WangL, NoufiR. Solar Energy Materials & Solar Cells, 1996, 41–42: 231

[8] KesslerJ, ScholdstromJ, StoltL. Analysis of CIGS Films and Devices Resulting from Different Cu-rich to Cu-poor TransitionsProceedings of 17th European Photovoltaic Solar Energy Conference, Munich, 2001, 1019

[9] LiB-y, ZhangY, LiuW, SunY. Optoelectronics Letters, 2012, 8: 348

[10] KesslerJ, ChityuttakanC, LuJ, ScholdstromJ, StoltL. Prog. Photovolt: Res. Appl., 2003, 11: 319

[11] ChaisitsakS, TokitaY, MiyazakiH, MikamiR, YamadaA, KonagaiM. Control and Preferred Orientation for Cu(In,Ga)Se₂ Thin Films and Its Effect on Solar Cell PerformanceProceedings of 17th European Photovoltaic Solar Energy Conference, Munich, 2001, 1011

[12] ContrerasM A, EgaasB, KingD, SwartzlanderaA, DullweberbT. Thin Solid Films, 2000, 361–362: 167

[13] KoharaN, NegamiT, NishitaniM, WadaT. Jpn. J. Appl. Phys., 1995, 34: L1141

[14] XueY-m, XuC-m, ZhangL, SunY, WangW, YangB-h. Journal of Optoelectronics ·Laser, 2008, 19: 348

[15] LinZ, XuF, WeaverJ H. Phys. Rev. B, 1987, 36: 5777

[16] AlbinD S, MooneyG D, DudaA, TuttleJ, MatsonR, NoufiR. Solar Cells, 1991, 30: 47

[17] XinZ-j, ChenX-m, QiaoZ-x, WangH, XueY-m, PanZ, TianY. Oproelectronics Letters, 2013, 9: 112

[18] BarreauN, PainchaudT, Couzinié-DevyF, ArzelL, KesslerJ. Acta Materialia, 2010, 58: 5572

[19] NakadaT, OhboH, FukudaM, KuniokaA. Solar Energy Materials and Solar Cells, 1997, 49: 261