Preparation of high-quality AIN films by two-step method of radio frequency magnetron sputtering

Abstract

The preparation of nanometer aluminum nitrogen (AlN) films with uniform lattice arrangement is of great significance for the manufacture of high-frequency surface acoustic wave (SAW) device. We put forward the two-step growth method and the annealing treatment method for the deposition of (100) AlN thin films. The results show that when the sputtering pressure is 1.2 Pa and the ratio between N₂ and Ar is 12:8, the influence of lattice thermal mismatch and anti-phase is the smallest during the nucleation growth at low-temperature stage of (100) AlN/(100) Si films. The root-mean-square (RMS) surface roughness of AlN prepared by the two-step method is reduced from 6.4 nm to 2.1 nm compared with that by common deposition process.

Keywords

Surface Acoustic Wave / Mean Free Path / Radio Frequency Magnetron / Nucleation Growth / Nucleation Layer Growth

References

[1] KirschP, AssouarM B, ElmazriaO. American Institute of Physics, 2006, 88: 223

[2] EimazriaO, ZhgoonS, Le Brizoual}L. Frederic SarryApplied Physics Letters, 2009, 95: 233

[3] Tao-taoY, Bao-heY, Cui-pingL, jinW. Journal of Optoelectronics·Laser, 2012, 23: 1328

[4] XiongJ, GuH S, HuK, HuM Z. International Journal of Minerals, Metallurgy and Materials, 2010, 17: 98

[5] IriarteG F, RodriguezJ G, CalleF. Microsystem Technologies-Micro- and Nanosystems-Information Storage and Processing Systems, 2011, 17: 381

[6] SongnZ R. Thin Solid Films, 2004, 459: 41

[7] ZouW-w, WangY-x, XuY, ZhangX. OME Information, 2011, 28: 10

[8] GuoY, ChenX-m, YangB-h, SunL, WuX-g. Journal of Optoelectronics·Laser, 2011, 22: 1807

[9] XuX-H, WuH-S, ZhangC-J, JinZ-H. Thin Solid Films, 2001, 388: 62

[10] GruvermanA, KalininS V. Journal of Materials Science, 2006, 41: 107

[11] DuanX F, HuangY, AgarwalR, LieberC M. Nature, 2003, 421: 241

[12] SinghA V, ChandraS, SrivastavaA K, ChakrobortyB R, SehgalG, DalaiM K, BoseaG. Applied Surface Science, 2011, 257: 9568

[13] BosundM, SajavaaraT, LaitinenM, HuhtioaT, PutkonencM, AiraksinendV-M, LipsanenaH. Applied Surface Science, 2011, 257: 7827

[14] JahedH M, PrieurA G. Journal of Electronic Measurement and Instrument, 2011, 25: 583