AND gate based on two-photon absorption in semiconductor optical amplifier

Amer Kotb

Optoelectronics Letters ›› 2013, Vol. 9 ›› Issue (3) : 181 -184.

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Optoelectronics Letters ›› 2013, Vol. 9 ›› Issue (3) : 181 -184. DOI: 10.1007/s11801-013-2418-7
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AND gate based on two-photon absorption in semiconductor optical amplifier

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Abstract

An all-optical logic AND gate based on two-photon absorption (TPA) in semiconductor optical amplifier (SOA) is simulated. By solving the rate equations of SOA in the form of a Mach-Zehnder interferometer (MZI), the performance of AND gate is numerically investigated. The model takes the effects of amplified spontaneous emission (ASE) and pulse energy on the system’s quality factor (Q-factor) into account. Results show that the all-optical AND gate based on TPA in SOA-MZI based structure is feasible at 250 Gbit/s with a proper Q-factor.

Keywords

Semiconductor Optical Amplifier / Phase Gate / Carrier Heating / Input Pulse Energy / Beat Noise

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Amer Kotb. AND gate based on two-photon absorption in semiconductor optical amplifier. Optoelectronics Letters, 2013, 9(3): 181-184 DOI:10.1007/s11801-013-2418-7

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