Optimal quantum well width and the effect of quantum well position on the performance of transistor lasers

Abstract

Transistor laser (TL) model based on InGaP/GaAs/InGaAs/GaAs is analyzed and presented. It is realized that quantum well (QW) with width of 10 nm may be formed for low base threshold current density J_th. The emission wavelength is found to be 1.05 μm, and the indium (In) composition is 0.25 for optimal QW width. It is identified that J_th decreases with the movement of QW towards the base-emitter (B-E) interface. Small signal optical response is calculated, and the effect of QW position is studied. The bandwidth is enhanced due to the movement of the QW towards the emitter base junction.

Keywords

GaAs / Quantum Well / Base Region / Threshold Current Density / Differential Gain

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