All-optical logic NXOR based on semiconductor optical amplifiers with the effect of amplified spontaneous emission

Amer Kotb, Joji Maeda

Optoelectronics Letters ›› 2012, Vol. 8 ›› Issue (6) : 437-440.

Optoelectronics Letters ›› 2012, Vol. 8 ›› Issue (6) : 437-440. DOI: 10.1007/s11801-012-2292-8
Article

All-optical logic NXOR based on semiconductor optical amplifiers with the effect of amplified spontaneous emission

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Abstract

The performance of all-optical logic NXOR gate based on semiconductor optical amplifiers Mach-Zehnder interferometer (SOAs-MZI) is simulated. The effects of amplified spontaneous emission (ASE) and the input pulse energy on the system’s quality factor are studied. For the parameters used, the all-optical logic gates using SOAs are capable of operating at speed of 80 Gbit/s.

Keywords

Semiconductor Optical Amplifier / Amplify Spontaneous Emission / Carrier Heating / Spectral Hole Burning / Input Pulse Energy

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Amer Kotb, Joji Maeda. All-optical logic NXOR based on semiconductor optical amplifiers with the effect of amplified spontaneous emission. Optoelectronics Letters, 2012, 8(6): 437‒440 https://doi.org/10.1007/s11801-012-2292-8

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