Structural and optical properties of ZnO films prepared by ion beam sputtering

Abstract

Based on the ion beam sputtering deposition technology, ZnO thin films are deposited on the glass substrate. The four-factor and three-level L₉(3⁴) orthogonal experiment is used to obtain the best technological parameters of the deposited ZnO thin films, which are the discharge voltage of 3.5 kV, the oxygen current capacity of 8 sccm, the coil current of 8 A and the distance between target and substrate of 140 mm. The purity of the deposited ZnO thin film is 85.77%, and it has good crystallization in orientation. The experimental results show that research and development of the ion beam sputtering source are advanced, and the ion beam sputtering deposition technology can be used to deposit the orientation preferred thin films with good performance.

Keywords

Discharge Voltage / Substrate Holder / Orthogonal Experiment / Coil Current / Binding Energy Peak

References

[1] AhmedN. A., FortasG., HammacheH., SamS., KeffousA., ManseriA., GuerbousL., GabouzeN.. Appl. Surf. Sci., 2010, 256: 7442

[2] LiuH.-f., WangZ.-h.. Journal of Optoelectronics Laser, 2011, 22: 400

[2] LiuH.-f., WangZ.-h.. Journal of Optoelectronics Laser, 2011, 22: 400

[3] LiangJ. H., LaiH. Y., ChenY. J.. Appl. Surf. Sci., 2010, 256: 7305

[4] TarwalN. L., PatilP. S.. Appl. Surf. Sci., 2010, 256: 7451

[5] BaiY., LiX.-p., QiJ.-y.. Journal of Optoelectronics Laser, 2011, 22: 878

[5] BaiY., LiX.-p., QiJ.-y.. Journal of Optoelectronics Laser, 2011, 22: 878

[6] HongS. K., ChenY., KoH. J., WenischH., HanadaT., YaoT.. J. Electron. Mater., 2001, 30: 647

[7] LiuC. H., YanM.. Chem. Phys. Lett., 2002, 355: 43

[8] PuricaM., BudianuE., RusuE., DanilaM., GavrilaR.. Thin Solid Films, 2002, 403/404: 485

[9] LeeY., KimH.. Jpn. J. Appl. Phys., 2001, 40: 2423

[10] Jin-HongL., Kyung-HeeK., Byung-OkP.. J. Cryst. Growth, 2003, 247: 119

[11] LemlikchiaS., Abdelli-MessaciaS., LafaneaS., KerdjaT., GuittoumbA., SaadM.. Appl. Surf. Sci., 2010, 256: 5650

[12] XuJ., FanH., LiuW., SuJ.. Opto-Elec. Engineering, 2008, 35: 45

This work has been supported by the National Natural Science Foundation of China (Nos.60978040 and 61205155), and the Science and Technology Projects in Xi’an (No.CXY1015-2).