Study on the structural, electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering

Rui-xin Ma, Mu-kong Wang, Bo Kang, Yong-gang Wang

Optoelectronics Letters ›› 2011, Vol. 7 ›› Issue (1) : 45-48.

Optoelectronics Letters ›› 2011, Vol. 7 ›› Issue (1) : 45-48. DOI: 10.1007/s11801-011-9266-0
Article

Study on the structural, electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering

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Abstract

Al and F co-doped ZnO (ZnO:(Al, F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents. The structural, electrical and optical properties of the deposited films are sensitive to the F doping content. The X-ray analysis shows that the films are c-axis orientated along the (002) plane with the grain size ranging from 9 nm to 13 nm. Micrographs obtained by the scanning electron microscope (SEM) show a uniform surface. The best films obtained have a resistivity of 2.16×10−3Ù cm, while the high optical transmission is 92.0% at the F content of 2.46 wt.%.

Keywords

Doping Content / Solar Energy Mater / Chemical Spray Pyrolysis Technique / Optical Transmittance Curve / Sputter Power Density

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Rui-xin Ma, Mu-kong Wang, Bo Kang, Yong-gang Wang. Study on the structural, electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering. Optoelectronics Letters, 2011, 7(1): 45‒48 https://doi.org/10.1007/s11801-011-9266-0

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