An air-stable inverted photovoltaic device using ZnO as the electron selective layer and MoO₃ as the blocking layer

Abstract

An air-stable photovoltaic device based on znic oxide nanoparticles (ZNP) in an inverted structure of indium tin oxide (ITO)/ZnO/poly (3-hexylthiophene) (P3HT): [6,6]-phenyl C₆₁-butyric acid methyl ester (PCBM)/MoO₃/Ag is studied. We find that the optimum thickness of the MoO₃ layer is 2 nm. When the MoO₃ blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%. The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO₃ layer.

Keywords

Power Conversion Efficiency / Apply Physic Letter / Blocking Layer / High Hole Mobility / Inverted Device

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