Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

Yan Zhu; Hai-qiao Ni; Hai-li Wang; Ji-fang He; Mi-feng Li; Xiang-jun Shang; Zhi-chuan Niu

doi:10.1007/s11801-011-1032-9

Optoelectronics Letters ›› 2011, Vol. 7 ›› Issue (5) : 325 -329. DOI: 10.1007/s11801-011-1032-9

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Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy

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Abstract

The GaAs based InGaAs metamorphic structures and their growth by molecular beam epitaxy (MBE) are investigated. The controlling of the source temperature is improved to realize the linearly graded InGaAs metamorphic structure precisely. The threading dislocations are reduced. We also optimize the growth and annealing parameters of the InGaAs quantum well (QW). The 1.3-μm GaAs based metamorphic InGaAs QW is completed. A 1.3-μm GaAs based metamorphic laser is reported.

Keywords

GaAs / Molecular Beam Epitaxy / Quantum Well / Apply Physic Letter / Threshold Current Density

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Yan Zhu, Hai-qiao Ni, Hai-li Wang, Ji-fang He, Mi-feng Li, Xiang-jun Shang, Zhi-chuan Niu. Study of metamorphic InGaAs/GaAs quantum well laser materials grown on GaAs substrate by molecular beam epitaxy. Optoelectronics Letters, 2011, 7(5): 325-329 DOI:10.1007/s11801-011-1032-9

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