Zone-center optical phonons in wurtzite InAlN crystal

Gui-chu Chen , Guang-han Fan

Optoelectronics Letters ›› 2011, Vol. 7 ›› Issue (5) : 394 -396.

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Optoelectronics Letters ›› 2011, Vol. 7 ›› Issue (5) : 394 -396. DOI: 10.1007/s11801-011-1006-y
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Zone-center optical phonons in wurtzite InAlN crystal

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Abstract

An experimental study of the optical phonons is presented for InAlN epilayers lattice-matched with GaN by means of Raman scattering, and theoretical simulations are done to investigate the zone-center optical phonons of InAlN alloy by using the modified random element isodisplacement (MREI) model. The calculated findings show that the LO and TO branches of InAlN crystal both exhibit nonlinear properties. A comparison is made between the theoretical results and the experimental data, and it shows that they are both consistent for the A1(LO) phonons of InAlN epilayers.

Keywords

Optical Phonon / Local Electric Field / Calculated Finding / Optical Phonon Frequency / Entrance Slit Width

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Gui-chu Chen, Guang-han Fan. Zone-center optical phonons in wurtzite InAlN crystal. Optoelectronics Letters, 2011, 7(5): 394-396 DOI:10.1007/s11801-011-1006-y

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