Effect of substrate temperature on aligned high-density carbon nanotubes deposited by RF-PECVD
Kai-liang Zhang , Xin-yuan Lin , Wang Xu , Yin-ping Miao , Kai Hu , Yong Zhang
Optoelectronics Letters ›› 2011, Vol. 7 ›› Issue (2) : 85 -87.
Effect of substrate temperature on aligned high-density carbon nanotubes deposited by RF-PECVD
The high-density carbon nanotubes (CNTs) are synthesized on Fe/Si substrate in the mixture of acetylene and hydrogen gas by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. The effects of substrate temperature on the growth of CNTs are studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman spectroscopy. The quality of CNTs is improved considerably by increasing the substrate temperature while the beam density is increased and graphitization degree (ID/IG) is enhanced. The best aligned CNTs are prepared at 750 °C, the beam D density is about 1.6 × 103/μm2, and ID/IG is about 0.93. Temperature influence is also discussed.
Raman Spectrum / Scanning Electron Microscopy Image / Substrate Temperature / Beam Density / Catalyst Film
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| [5] |
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| [6] |
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| [7] |
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| [8] |
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| [9] |
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| [10] |
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| [11] |
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| [12] |
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| [13] |
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| [14] |
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| [15] |
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| [17] |
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