Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD

Bao-hua He; Shi-e Yang; Yong-sheng Chen; Jing-xiao Lu

doi:10.1007/s11801-011-0127-7

Optoelectronics Letters ›› 2011, Vol. 7 ›› Issue (3) : 198-201. DOI: 10.1007/s11801-011-0127-7

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Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD

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Abstract

We present a numerical gas phase reaction model for hydrogenated microcrystalline silicon (μc-Si:H) films from SiH₄ and H₂ gas mixtures with plasma enhanced chemical vapor deposition (PECVD). Under the typical μc-Si:H deposition conditions, the concentrations of the species in the plasma are calculated and the effects of silane fraction (SF=[SiH₄]/[H₂+SiH₄]) are investigated. The results show that SiH₃ is the key precursor for μc-Si:H films growth, and other neutral radicals, such as Si₂H₅, Si₂H₄ and SiH₂, may play some roles in the film deposition. With the silane fraction increasing, the precursor concentration increases, but H atom concentration decreases rapidly, which results in the lower H/SiH₃ ratio.

Keywords

Film Growth / Plasma Enhance Chemical Vapor Deposition / Crystalline Fraction / Neutral Radical / Silane Fraction

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Bao-hua He, Shi-e Yang, Yong-sheng Chen, Jing-xiao Lu. Simulation of gas phase reactions for microcrystalline silicon films fabricated by PECVD. Optoelectronics Letters, 2011, 7(3): 198‒201 https://doi.org/10.1007/s11801-011-0127-7

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This work has been supported by the State Key Development Program for Basic Research of China (No.2006CB202601), the National Natural Science Foundation of China (No.51007082), and the Natural Science Foundation of Henan Province (No.072300410080).