Transient simulation and optimization of InP/InGaAs unitraveling carrier photodetector

Abstract

The transient photoresponse of a backside-illuminated InP/InGaAs uni-traveling carrier photodetector (UTC-PD) is simulated by a 2D drift-diffusion approach utilizing a commercial numerical device simulator (ATLAS). The effects of the epitaxial layer structure and device biasing are taken into account. The simulation results indicate that the absorption region has a critical effect on the photoresponse pulse, and an optimized epitaxial layer structure is given to achieve a fast response while maintaining a reasonable response. Here, the optimized material parameters of the absorption region are 180 nm and 5×10¹⁶cm⁻³, respectively.

Keywords

Doping Concentration / Absorption Region / Response Pulse / Absorption Layer / Collection Region

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