Influence of temperature on Auger recombination lifetime in In_1−xGa_xAs materials

Abstract

The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In_1−xGa_xAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are 10¹⁷ cm⁻³ and 10¹⁸ cm⁻³, respectively. The results show that the temperature has little influence on Auger recombination lifetime of In_1−xGa_xAs materials at x<0.3. However, it has a great impact when x>0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination lifetime of p-type In_1−xGa_xAs is longer than that of n-type In_1−xGa_xAs with the same temperature, Ga composition and carriers concentration.

Keywords

Auger / Carrier Concentration / Gallium Arsenide / Auger Recombination / Light Hole

References

[1] ChenL.-h.. Infrared and Laser Engineering, 2008, 37: 1

[2] OzerS., CellekO. O., BesikciC.. Infrared Physics and Technology, 2005, 47: 115

[3] LatikaB.. Proc. of SPIE, 2005, 5881: 588105

[4] ZhangK.-f., TangH.-j., LiT., LiY.-f., NingJ.-h., LiX., GongH.-m.. Journal of Optoelectronics · Laser, 2009, 20: 713

[5] WangQ., RenX.-m., XiongD.-p., ZhouJ., LvJ.-h., HuangH., HuangY.-q., CaiS.-w.. Journal of Optoelectronics·Laser, 2007, 18: 1143

[6] HenryY., JongwooK., GaryA., JoyceL., KaiS., JosephK.C., TedW.. Proc. of SPIE, 2008, 6950: 695000

[7] RogalskiA., OrmanZ.. Infrared Phys., 1985, 25: 551

[8] TakeshimaM.. J. Appl. Phys., 1972, 43: 4114

[9] GelmontB.L.. Phys. Lett. A, 1978, 66: 323

[10] TianY., ZhouT.M., ZhangB.L., JiangH., JinY.X.. Opt. Eng., 1998, 37: 1754

[11] PaulS., RoyJ.B., BasuP.K.. J. Appl. Phys., 1991, 69: 827829