Influence of temperature on Auger recombination lifetime in In1−xGaxAs materials

Yu-chun Chang; Chang-xin Tian; Yan Ma; Jing-zhi Yin; Qiang Gao; Yi-ding Wang; Fu-bin Gao; Guo-tong Du

doi:10.1007/s11801-010-9188-2

Optoelectronics Letters ›› 2010, Vol. 6 ›› Issue (1) : 31-33. DOI: 10.1007/s11801-010-9188-2

Article

Influence of temperature on Auger recombination lifetime in In_1−xGa_xAs materials

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Abstract

The influence of temperature and Ga composition on Auger recombination lifetime in n-type and p-type In_1−xGa_xAs materials is investigated through the simulation, assuming the concentrations of electrons and holes are 10¹⁷ cm⁻³ and 10¹⁸ cm⁻³, respectively. The results show that the temperature has little influence on Auger recombination lifetime of In_1−xGa_xAs materials at x<0.3. However, it has a great impact when x>0.3 and the effect is more obvious at a lower temperature. Moreover, Auger recombination lifetime of p-type In_1−xGa_xAs is longer than that of n-type In_1−xGa_xAs with the same temperature, Ga composition and carriers concentration.

Keywords

Auger / Carrier Concentration / Gallium Arsenide / Auger Recombination / Light Hole

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Yu-chun Chang, Chang-xin Tian, Yan Ma, Jing-zhi Yin, Qiang Gao, Yi-ding Wang, Fu-bin Gao, Guo-tong Du. Influence of temperature on Auger recombination lifetime in In_1−xGa_xAs materials. Optoelectronics Letters, 2010, 6(1): 31‒33 https://doi.org/10.1007/s11801-010-9188-2

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This work has been supported by the National Natural Science Foundation of China (No.60676039), the National High Technology Research and Development Program of China (No.2007AA06Z112), Research Fund for the Doctoral Program of Higher Education of China (No. 20060183030), and the Science and Technology Department of Jilin Province (No.20070709).