Performance of bifacial HIT solar cells on n-type silicon substrates

Abstract

The performance of amorphous silicon (a-Si:H) / crystalline silicon (c-Si) heterojunction is studied, and the effects of the emitter layer thickness, doping concentration, intrinsic layer thickness, back heavily-doped n layer, interface state and band offset on the optical and electrical performance of bifacial heterojunction with intrinsic thin-layer (HIT) solar cells on ntype silicon substrates are discussed. It is found that the HIT solar cells on n-type substrates can obtain a higher conversion efficiency than those on p-type substrates by calculating the band diagrams and parameters of HIT solar cells.

Keywords

Solar Cell / Doping Concentration / Crystalline Silicon / Heterojunction Solar Cell / High Conversion Efficiency

References

[1] Eiji Maruyama, Akira Terakawa and Mikio Taguchi, 4th World Conference on Photovoltaic Energy Conversion, Hawaii, 1455 (2006).

[2] LinH.-s., DuanK.-m., MaL.. Journal of Optoelectronics·Laser, 2002, 13: 460

[3] TsunomuraY., YoshimineY., TaguchiM.. Solar Energy Materials and Solar Cells, 2009, 93: 670

[4] ZhaoL., ZhouC. L., LiH. L.. Solar Energy Materials and Solar Cells, 2008, 92: 673

[5] RenB.-y., ZhangY., KuoB.. Chinese Journal of Semiconductor, 2008, 29: 1112

[6] Stang1 R and Kriegel M, 4th World Conference on Photovoltaic Energy Conversion, Hawaii, 2006.

[7] XU Ying, Study on a-Si:H/c-Si Hetero-junction Solar Cells, Institute of Semiconductors Chinese Academy of Sciences, 2006. (in Chinese)

[8] GuoZ.-j., XingH.-w., WangY.-h., MaY.-j., LiuD.-q., MaC.-z., PengY.-q., LiJ.. Optoelectronics Letters, 2008, 4: 410

[9] HanX.-y., GengX.-h., GuoQ.-c., YuanY., HouG.-f., WeiC.-c., ZhangX.-d., SunJ., XueJ.-m., ZhaoY., CaiN., RenH.-z., ZhangD.-k.. Journal of Optoelectronics · Laser, 2008, 19: 54

This work has been supported by the Project of Economy and Information Technology Developments of Shanghai, China (No.07XI2-016) and the Postdoctor Science Foundation of Shanghai, China (No. 08R214202).