Study of a SiGe-HBT-based 1:2 demultiplexer IC up to 100 Gb/s rate

Zheng-fei Hu

Optoelectronics Letters ›› 2010, Vol. 6 ›› Issue (1) : 24-26.

Optoelectronics Letters ›› 2010, Vol. 6 ›› Issue (1) : 24-26. DOI: 10.1007/s11801-010-9143-2
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Study of a SiGe-HBT-based 1:2 demultiplexer IC up to 100 Gb/s rate

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Abstract

An ultra-high speed 1:2 demultiplexer for optical fiber communication systems is designed utilizing the IHP 0.25 μm SiGe BiCMOS technology. The latch of the demultiplexer core circuit is researched. Based on the current measurement condition, a high-gain and wide-bandwidth clock buffer is designed to drive large load. Transmission line theory for ultra-high speed circuits is used to design matching network to solve the matching problem among the input, output and internal signals. The transient analysis shows that this demultiplexer can demultiplex one 100 Gb/s input into two 50 Gb/s outputs. The chip area of it is 0.7 mm × 0.47 mm, the input and output data are both at 400 mVP-P PCML standard voltage level, and the power consumption of the IC is 900 mW at the power supply of −4 V.

Keywords

Skin Effect / Chip Area / Transmission Line Theory / Optical Fiber Communication System / BiCMOS Technology

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Zheng-fei Hu. Study of a SiGe-HBT-based 1:2 demultiplexer IC up to 100 Gb/s rate. Optoelectronics Letters, 2010, 6(1): 24‒26 https://doi.org/10.1007/s11801-010-9143-2

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This work has been supported by the Communication Systems Project of Jiangsu Education Department (No. JHB04010).

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