Hydrogen passivation for the performance enhancement of poly-Si crystallized by double-frequency YAG laser

Abstract

The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA poly-Si). The effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed. It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.

Keywords

Hall Mobility / Passivation Process / Laser Anneal / Passivation Treatment / Optoelectronic Letter

References

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