Performance of pentacene-based organic field effect transistors using different polymer gate dielectrics
Ren-lei Wu, Xiao-man Cheng, Hong Zheng, Shou-gen Yin
Optoelectronics Letters ›› 2010, Vol. 5 ›› Issue (6) : 409-412.
Performance of pentacene-based organic field effect transistors using different polymer gate dielectrics
Pentacene-based organic field effect transistors (OFETs) are fabricated using poly(methyl methacrylate) (PMMA) and polyimide (PI) as gate dielectrics, respectively. The fabricated OFETs exhibit reasonable device characteristics. The field-effect mobility, threshold voltage, and on/off current radio are determined to be 3.214 × 10−2 cm2/Vs, −28 V, and 1 ×103 respectively for OFETs with PMMA as gate dielectrics, and 7.306×10−3cm2/Vs, −21 V, and 2 ×102 for OFETs with PI. Furthermore, the dielectric properties of gate insulator layer are tested and the dipole effect at the semiconductor/dielectrics interface is also analyzed by a model of energy level diagram.
PMMA / Polyimide / Pentacene / Gate Dielectric / Energy Level Diagram
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