Analytical modeling and ATLAS simulation for a homojunction LED in the mid-infrared spectral region

Abstract

A generic analytical model and the ATLAS simulation of a homojunction light emitting diode (LED) based on p⁺-InAs_0.91Sb_0.09/n⁰-InAs_0.91Sb_0.09/n⁺-InAs_0.91Sb_0.09 materials grown on lattice matched p⁺-GaSb substrate are presented. This LED is suitable for use as source in the optical absorption gas spectroscopy in the mid-infrared spectral region at 300 K. The various electro-optical properties of the homojunction LED are evaluated using analytical techniques and ATLAS device simulation software. The current-voltage characteristics of the structure are computed analytically and simulated, and the results are found to be in good agreement. The output power of the homojunction LED is estimated as a function of bias current under high carrier injection and compared with the reported experimental results.

Keywords

Light Emit Diode / Minority Carrier Lifetime / GaSb Substrate / Electric Field Profile / Light Emit Diode Structure

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