A study on the key factors affecting the electronic properties of monocrystalline silicon solar cells

Abstract

The model of monocrystalline silicon solar cells is established, and the effects of wafer parameters, such as the p-Si (100) substrate thickness, the defect density, and the doping concentration, on the electronic properties of monocrystalline silicon solar cells are analyzed. The results indicate that the solar cells with an Al back-surface-field will have good electronic properties when the wafers meet the following three conditions: (i) the defect density is less than 1.0×10¹¹ cm⁻³; (ii) the doping concentration is from 5×10¹⁵ cm⁻³ to 1×10¹⁷ cm⁻³, i.e. the bulk resistivity is from 0.5 Ω·cm to 10 Ω·cm; (iii) the cells substrate thickness is in the range of 100 µm to 200 µm.

Keywords

Solar Cell / Doping Concentration / Defect Density / Open Circuit Voltage / Minority Carrier

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