Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape

Xiao-wei Li, Cui-ping Li, Cheng-yao Gao, Meng-xue Huang, Bao-he Yang

Optoelectronics Letters ›› 2009, Vol. 5 ›› Issue (4) : 273-275.

Optoelectronics Letters ›› 2009, Vol. 5 ›› Issue (4) : 273-275. DOI: 10.1007/s11801-009-8214-8
Article

Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape

Author information +
History +

Abstract

The diamond films adherent to Si substrate are deposited with the microwave plasma CVD (MPCVD) at microwave powers of 6000 W and 4000 W from 6 h to 10 h, respectively, the internal stresses of the films are measured by XRD. Spectral peak shift and widening are applied to calculate the magnitudes of macro and micro stresses. The results show that the macro stress is tensile. The internal stress can be controlled by the microwave power. With the microwave power increasing, the intrinsic and macro stresses decrease, and the micro stress increases significantly. Also, it can be found that the macro and micro stresses increase with deposited time when the other conditions are the same.

Keywords

Internal Stress / Microwave Power / Diamond Film / Crystal Face / Intrinsic Stress

Cite this article

Download citation ▾
Xiao-wei Li, Cui-ping Li, Cheng-yao Gao, Meng-xue Huang, Bao-he Yang. Internal stress in MPCVD diamond films on the Si substrate based on XRD line shape. Optoelectronics Letters, 2009, 5(4): 273‒275 https://doi.org/10.1007/s11801-009-8214-8

References

[1]
FanQ. H., GrácioJ., PereiraE.. J. of Appl. Physics, 2000, 87: 2880
CrossRef Google scholar
[2]
LabudovicM., BurkaM.. IEEE Transactions on Components Andpacka-ging Technologies, 2003, 26: 575
CrossRef Google scholar
[3]
FerreiraN.G., AbramofE., LeiteN. F., CoratE. J., Trava-AiroldiV. J.. Journal of Applied Physics, 2002, 91: 2466
CrossRef Google scholar
[4]
WieligorM., ZerdaT. W.. Diamond and Related Materials, 2008, 17: 84
CrossRef Google scholar
[5]
JeongJ.-h., KwonD., LeeW.-S., BaikY.-J.. Journal of Applied Physics, 2001, 90: 1227
CrossRef Google scholar
[6]
YuJ., KimJ. G., ChungJ. O., ChoD. H.. Journal of Applied Physics, 2000, 88: 1688
CrossRef Google scholar
[7]
MoghaddamS., RadaM., ShooshtariA.. Microelectron J, 2003, 34: 223
CrossRef Google scholar
[8]
MacherauchE., WohlfahrtH., WolfstiegU.. Zurzweckmä Bigen Definition von eigenspannungen Härtereà Techn. Mitt., 1973, 28: 201
[9]
FanX., MaS.. Ceramic Industry, 2002, 9: 43

Accesses

Citations

Detail

Sections
Recommended

/