Effects of modulation frequency on the structure and electrical characteristics of μc-Si:H films prepared by pulsed VHF-PECVD

Shi-feng Wang , Xiao-dan Zhang , Ying Zhao , Chang-chun Wei , Sheng-zhi Xu , Jian Sun , Xin-hua Geng

Optoelectronics Letters ›› 2009, Vol. 5 ›› Issue (3) : 212 -215.

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Optoelectronics Letters ›› 2009, Vol. 5 ›› Issue (3) : 212 -215. DOI: 10.1007/s11801-009-8206-8
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Effects of modulation frequency on the structure and electrical characteristics of μc-Si:H films prepared by pulsed VHF-PECVD

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Abstract

Modulation frequency and pulse duty cycle are two key parameters of pulsed VHF-PECVD technology. An experimental study on the microcrystalline silicon materials prepared by pulsed VHF-PECVD technology in high deposition rate is presented. And combining the diagnosis of plasma process with optical emission spectroscopy (OES), the dependence of microstructure and electrical properties of thin films on the pulse modulation frequency is discussed in detail.

Keywords

Modulation Frequency / Optical Emission Spectroscopy / Pulse Period / Duty Ratio / High Deposition Rate

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Shi-feng Wang, Xiao-dan Zhang, Ying Zhao, Chang-chun Wei, Sheng-zhi Xu, Jian Sun, Xin-hua Geng. Effects of modulation frequency on the structure and electrical characteristics of μc-Si:H films prepared by pulsed VHF-PECVD. Optoelectronics Letters, 2009, 5(3): 212-215 DOI:10.1007/s11801-009-8206-8

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