Analysis of dispersion in the nano-InP doped fiber

Yu-wen Duan, Ru Zhang, Pei-lin Lang

Optoelectronics Letters ›› 2009, Vol. 5 ›› Issue (1) : 37-40.

Optoelectronics Letters ›› 2009, Vol. 5 ›› Issue (1) : 37-40. DOI: 10.1007/s11801-009-8125-8
Optoelectronics Letters

Analysis of dispersion in the nano-InP doped fiber

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Abstract

We propose that nanomaterials are used for fibers. A novel nano-InP doped fiber has been fabricated by the method of modified chemical vapor deposition (MCVD).It has been measured that the doping concentration of phosphorus element is 0.1%. The relationship between refractive index and the wavelength is obtained by fitting experimental data to Sellmeier equation. Dispersion of the fiber has been calculated in the wavelength range of 1.2–1.6 μm. As the wavelength varies from 1.20 μm to 1.60 μm, dispersion parameter D increases but is always negative. It has been found that the dispersion of nano-InP doped fibers is strongly changed compared with standard single-mode fibers, due to the nano-InP dopant which leads to a higher refractive index difference.

Keywords

Dispersion Parameter / Chromatic Dispersion / Silica Fiber / Optical Fiber Communication / Coulomb Field

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Yu-wen Duan, Ru Zhang, Pei-lin Lang. Analysis of dispersion in the nano-InP doped fiber. Optoelectronics Letters, 2009, 5(1): 37‒40 https://doi.org/10.1007/s11801-009-8125-8

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