Design and fabrication of InP micro-ring resonant detectors

Abstract

The quantum efficiency and the transient response of the InP semiconductor micro-ring resonant detector are analyzed to get the optimum design parameters. Then the side coupling micro-ring resonant is fabricated using the InP semiconductor material based on the parameters. The micro-ring resonant cavity has the raius of 80 μm, waveguide width of 3 μm and the coupler gap of 1 μm. The test results show that the FSR is 0.75 nm, and the FWHM is 0.5 nm, which are consistent with the theoretical calculation results.

Keywords

Quantum Efficiency / Absorption Layer / Optimum Design Parameter / IEEE Photonic Technology Letter / Waveguide Width

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