Study of nitrogen doping behavior in diamond film

Ming-ji Li , Bao-he Yang , Da-zhi Sun , Zeng-sun Jin

Optoelectronics Letters ›› 2008, Vol. 4 ›› Issue (6) : 433 -436.

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Optoelectronics Letters ›› 2008, Vol. 4 ›› Issue (6) : 433 -436. DOI: 10.1007/s11801-008-8070-y
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Study of nitrogen doping behavior in diamond film

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Abstract

Nitrogen-doped diamond films have been synthesized by EA-CVD (electron assisted chemical vapor deposition) technique. The quality and nitrogen impurity states of the diamond films are characterized by SEM, raman spectroscopy, XPS and EPR spectroscopy, respectively. The results show that the morphology changes from well-defined facets to cauliflower-like structures, the content of amorphous carbon increases and the quality drops with increasing the nitrogen flow rate. Furthermore, in the films, it can be observed that nitrogen impurity exists in the forms of Ns0, [N-V]0 and [N-V]−1. The contents of [N-V]0 and [N-V]−1 are lower when the nitrogen flow rate is relatively high, and the concentration of Ns0 varies from 15 ppm to 483 ppm.

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Ming-ji Li, Bao-he Yang, Da-zhi Sun, Zeng-sun Jin. Study of nitrogen doping behavior in diamond film. Optoelectronics Letters, 2008, 4(6): 433-436 DOI:10.1007/s11801-008-8070-y

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