InAs/InAsSb Avalanche Photodiode (APD) for applicaions in long-wavelength infrared region

Abstract

A generic numerical model of a long-wavelength Avalanche Photodiode (APD) based on narrow bandgap semiconductor InAsSb on InAs substrate is reported for the first time. This model has been applied for theoretical characterization of a proposed N⁺ InAS/P-InAsSb avalanche photodiode structure for possible application in 2–5 μm wavelength region. The parameters such as gain, excess noise factor and their trade-off with variation of doping concentration and bias voltage have been estimated for the APD taking into account history-dependent theory of avalanche multiplication process. The LWIR APD is expected to find application in optical gas sensor and in future generation of optical communication system.

References

[1] RogalskiA., AdamiecK., RutkowskiJ.. Narrow-Gap Semiconductor Photodiode, 2000, Bellingham, USA, SPIE Press

[2] RogalskiA.. Opt. Eng., 1994, 33: 1395

[3] KrierA., GaoH.H., SherstnevV.V.. Applied Phys. Lett., 2000, 77: 872

[4] ChakrabartiP., KrierA., MorganA. F.. IEEE Trans. on Electron Devices, 2003, 50: 2049

[5] McIntyreR.J.. IEEE Trans. Electron Devices, 1966, 13: 164

[6] McIntyreR.J.. IEEE Trans. Electron Devices, 1972, ED19: 703

[7] OkutoY., CrowellC. R.. Phys. Rev. B, 1972, 6: 3076

[8] McIntyreR. J.. Phys. Rev. B, 1974, 10: 4284

[9] McIntyreR. J.. Solid-State Electron., 1975, 18: 161

[10] StillmanG.E., WolfeC.M., DimmockJ.O.. Semiconductors & Semimetals, 1977, New York, Academic Press

[11] McIntyreR.J.. IEEE Trans. Electron Devices, 1999, 46: 1623

[12] M. Levinshtein, S. Rumyantsev, and M. Shur, World Scientific, 1 & 2 (1996).