Passive mode locked diode-pumped Nd:GdYVO4 laser with a GaAs absorber

Wei Dai; De-chuan Li; Ming-jian Wang; Shuai-yi Zhang; Guo-lei Yu; Jian Li

doi:10.1007/s11801-008-8064-9

Optoelectronics Letters ›› 2008, Vol. 4 ›› Issue (6) : 422 -424. DOI: 10.1007/s11801-008-8064-9

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Passive mode locked diode-pumped Nd:GdYVO₄ laser with a GaAs absorber

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Abstract

A passively Q-switched mode-locked Nd:GdYVO₄ laser is successfully demonstrated by using a piece of GaAs crystal grown at low temperature as the passively saturated absorber and the output coupler. Fundamental properties of the Nd: GdYVO₄ laser are investigated. The maximum average output power of 3.5 W is obtained by using plainsphere when the incident pumping power is 10 W, which corresponds to an optical-optical coversion efficiency of 35%. The threshold power for the Q-switching mode-locked is 1.2 W. The maximum average output power of 1.72 W is obtained by using GaAs when the incident pumping power is 10 W, mode-locked pulse train with a repetition rate of ∼113 MHz is achieved. At the incident laser pumping power of 7 W, the modulation depth is 100%.

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Wei Dai, De-chuan Li, Ming-jian Wang, Shuai-yi Zhang, Guo-lei Yu, Jian Li. Passive mode locked diode-pumped Nd:GdYVO₄ laser with a GaAs absorber. Optoelectronics Letters, 2008, 4(6): 422-424 DOI:10.1007/s11801-008-8064-9

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