Low voltage n-type OFET based on double insulators

Abstract

A top contact n-type organic field-effect transistor with low operating voltage was fabricated by employing Ta₂O₅/PMMA as the double insulators and PTCDI-C12 as the semiconductor active layer. The Ta₂O₅ layer was prepared by using simple economical anodization technique and the PMMA layer was prepared by using the spin-coating method. Compared with the OFET with single Ta₂O₅ insulator, the device with double insulators shows obviously better electrical performance. It has a field effect electron mobility of 0.063 cm²/Vs, an on/off ratio of 1.7×10⁴ and a threshold voltage of 2.3 V.

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