Monte Carlo simulation for the sputtering yield of Si₃N₄ thin film milled by focused ion beams

Abstract

The sputtering yield of the Si₃N₄ thin film is calculated by Monte Carlo method with different parameters. The dependences of the sputtering yield on the incident ion energy, the incident angle and the number of Gallium (Ga) and Arsenic (As) ions are predicted. The abnormal sputtering yield for As at 90 keV occurs when the incident angle reaches the range between 82° and 84°.

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