New insert layer structure OLEDs

Zhi-xiang Gao , Yu-ying Hao , Jun-feng Lei , Cheng Ma , Bing-she Xu

Optoelectronics Letters ›› 2008, Vol. 4 ›› Issue (3) : 209 -212.

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Optoelectronics Letters ›› 2008, Vol. 4 ›› Issue (3) : 209 -212. DOI: 10.1007/s11801-008-7125-4
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New insert layer structure OLEDs

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Abstract

An insert layer structure organic electroluminescent device(OLED) based on a new luminescent material (Zn(salen)) is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn(salen)/Liq/LiF/Al/CuPc/NPD/Zn(salen)/Liq/LiF/Al. Effective insert electrode layers comprising LiF(1 nm)/Al(5 nm) are used as a single semitransparent mirror, and bilayer cathode LiF(1 nm)/Al(100 nm) is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.

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Zhi-xiang Gao, Yu-ying Hao, Jun-feng Lei, Cheng Ma, Bing-she Xu. New insert layer structure OLEDs. Optoelectronics Letters, 2008, 4(3): 209-212 DOI:10.1007/s11801-008-7125-4

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