New insert layer structure OLEDs

Zhi-xiang Gao, Yu-ying Hao, Jun-feng Lei, Cheng Ma, Bing-she Xu

Optoelectronics Letters ›› 2008, Vol. 4 ›› Issue (3) : 209-212.

Optoelectronics Letters ›› 2008, Vol. 4 ›› Issue (3) : 209-212. DOI: 10.1007/s11801-008-7125-4
Article

New insert layer structure OLEDs

Author information +
History +

Abstract

An insert layer structure organic electroluminescent device(OLED) based on a new luminescent material (Zn(salen)) is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn(salen)/Liq/LiF/Al/CuPc/NPD/Zn(salen)/Liq/LiF/Al. Effective insert electrode layers comprising LiF(1 nm)/Al(5 nm) are used as a single semitransparent mirror, and bilayer cathode LiF(1 nm)/Al(100 nm) is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.

Cite this article

Download citation ▾
Zhi-xiang Gao, Yu-ying Hao, Jun-feng Lei, Cheng Ma, Bing-she Xu. New insert layer structure OLEDs. Optoelectronics Letters, 2008, 4(3): 209‒212 https://doi.org/10.1007/s11801-008-7125-4

References

[1]
TangC. W., Van SlykeS. A.. Appl. Phys. Lett., 1987, 51: 913
CrossRef Google scholar
[2]
ZhangJ.-m., JianX.-y., ZhangZ.-l.. J.of Optoeletronics · laser, 2006, 17: 131
[3]
GaoX. C., CaoH., HuangC., LiB.. Appl. Phys. Lett., 1998, 72: 2217
CrossRef Google scholar
[4]
JiangW.-l., DuanY., LiuS.-y.. J.of Optoeletronics · laser, 2006, 18: 129
[5]
LemmerU., HennigR., GussW.. Appl. Phys. Lett., 1995, 66: 1301
CrossRef Google scholar
[6]
CimrovaV., NegerD.. J.Appl.Phys., 1996, 79: 3299
CrossRef Google scholar
[7]
TokitoS., NodaK., TagaY.. Appl. Phys. Lett., 1996, 68: 2633
CrossRef Google scholar
[8]
XiongZ.-h., ShiH.-z., FanY.-l.. Acta Phys.Sin, 2003, 52: 1222
[9]
TakadaN., TsusuiT., SaitoS.. Appl. Phys. Lett., 1993, 63: 2032
CrossRef Google scholar

Accesses

Citations

Detail

Sections
Recommended

/