Model based reference metrology for dimensional characterization of micro- and nanostructures

Abstract

The requirements on the precision of dimensional metrology are especially stringent in the area of semiconductor manufacturing. This holds in particular for the measurement and control of the linewidths of the smallest structures on masks and silicon wafers and their corresponding reference metrology. In this paper we will describe the physical models and the reference instrumentation which were developed for photomask linewidth metrology at the PTB. It will be shown, how the results of the different methods can be used for comparative analyses. Application of these methods will be demonstrated exemplarily on the basis of newly developed photomask linewidth standards.

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