Organic thin film transistors with PMMA modified insulator

Abstract

A double insulation layer structure organic thin films transistor (OTFT) was investigated for improving the performance of the SiO₂ gate insulator. A 50 nm PMMA layer was coated on top of the SiO₂ gate insulator as the organic insulator layer. The results demonstrated that using inorganic/organic compound insulator as the gate dielectric layer is an effective method to fabricate OTFTs with improved electric characteristics and decreased leakage current. Electrical parameters of carrier mobility and on/off ratio were calculated. OTFT based on Si substrate with a field-effect mobility of 4.0 × 10⁻³ cm²/Vs and on/off ratio of 10⁴ was obtained.

References

[1] DruryC.J., MutsaersC. M. J., HartC. M.. Appl. Phys. Lett., 1998, 73: 108

[2] GundlachD.J., LinY.Y., JacksonT.N.. IEEE Electron Device Lett., 1997, 18: 87

[3] SherawC. D., ZhouL., HuangJ. R., GundlachD. J.. Appl. Phys. Lett., 2002, 80: 1088

[4] UemuraS., YoshidaM., HoshinoS., KodzasaT.. Thin Solid Films, 2003, 438–439: 378

[5] YuanJ., ZhangJ., WangJ.. Appl. Phys. Lett., 2003, 82: 3967