Fabrication and property analysis of AIGaInP red light LED with high bright

Jun Han, Jian-jun Li, Jun Deng, Yan-hui Xing, Xiao-dong Yu, Wei-zhi Lin, Ying Liu, Guang-di Shen

Optoelectronics Letters ›› 2007, Vol. 3 ›› Issue (6) : 417-419.

Optoelectronics Letters ›› 2007, Vol. 3 ›› Issue (6) : 417-419. DOI: 10.1007/s11801-007-7054-7
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Fabrication and property analysis of AIGaInP red light LED with high bright

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Abstract

The LED with DBR and enhancing transmission film was grown by MOCVD. At 20 mA DC injection current, the LED peak wavelength was 623 nm, the light intensity was 200 mcd, and the output light power was 2.14 mW. The light intensity and output light power have been improved than traditional LED.

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Jun Han, Jian-jun Li, Jun Deng, Yan-hui Xing, Xiao-dong Yu, Wei-zhi Lin, Ying Liu, Guang-di Shen. Fabrication and property analysis of AIGaInP red light LED with high bright. Optoelectronics Letters, 2007, 3(6): 417‒419 https://doi.org/10.1007/s11801-007-7054-7

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