Preparation of Indium Tin Oxide films deposited by reactive evaporation at different substrate-temperature and the properties
Lin-na Li, Jun-ming Xue, Ying Zhao, Yang-xian Li, Xin-hua Geng
Optoelectronics Letters ›› 2007, Vol. 3 ›› Issue (6) : 438-440.
Preparation of Indium Tin Oxide films deposited by reactive evaporation at different substrate-temperature and the properties
The Indium Tin Oxide films have been prepared at different substrate-temperature on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 1.3 × 10−1 Pa and a deposition rate of 10−2 nm/s. The best ITO films obtained have an electrical resistivity of 4.35 × 10−4 Ω·cm, a carrier concentration of 4.02 × 1020 cm−3, and a Hall mobility of 67.5 cm2v−1s−1. The influence of the substrate-temperature on the structural, optical and electrical properties of the obtained films has been investigated.
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