Preparation of Indium Tin Oxide films deposited by reactive evaporation at different substrate-temperature and the properties

Abstract

The Indium Tin Oxide films have been prepared at different substrate-temperature on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 1.3 × 10⁻¹ Pa and a deposition rate of 10⁻² nm/s. The best ITO films obtained have an electrical resistivity of 4.35 × 10⁻⁴ Ω·cm, a carrier concentration of 4.02 × 10²⁰ cm⁻³, and a Hall mobility of 67.5 cm²v⁻¹s⁻¹. The influence of the substrate-temperature on the structural, optical and electrical properties of the obtained films has been investigated.

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