A novel coupled quantum well with large negative electro-refractive index change and low absorption loss

Abstract

In order to solve excessive insertion loss and low on/off ratio in quantum well reflection-type waveguide optical switches, a novel InGaAs/InAlAs coupled quantum well structure is proposed. In the case of low applied electric field (F=19 kV/cm) and low absorption loss (α ≈61.2 cm⁻¹), a large negative field-induced refractive index change (Δ_n=−0.0134) is obtained in the novel coupled quantum well structure at the operating wavelength (λ=1550 nm). The value is larger by over one to two order of magnitude compared to that in a rectangular quantum well (RQW) on the above same work conditions.

References

[1.] ZuckerJ. E., HendricksonT. L.. Applied Physics Letters, 1988, 52: 945

[2.] ZuckerJ. E., JosephL. B.. Electron. Lett., 1988, 24: 458

[3] SusaN.. J. Appl. Phys., 1993, 73: 932

[4] MillerD.A.B., ChemlaD.S., DamenT.C.. Phys.Rev.B, 1985, 32: 1043

[5] ChengA.N., WiderH. H., ChangW. S. C.. IEEE Photon. Tich.Lett., 1995, 7: 1159

[6] NishimuraS., InoueH., SanoH., IshidaK.. IEEE Photon. Tech. Lett., 1992, 4: 1123