Investigation of spectrum blue shift in organic quantum well electroluminescent devices

Jin-zhao Huang , Zheng Xu

Optoelectronics Letters ›› 2007, Vol. 3 ›› Issue (1) : 37 -39.

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Optoelectronics Letters ›› 2007, Vol. 3 ›› Issue (1) : 37 -39. DOI: 10.1007/s11801-007-6135-y
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Investigation of spectrum blue shift in organic quantum well electroluminescent devices

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Abstract

In this paper, the organic quantum well devices, which are similar to the type-II quantum well of inorganic semiconductor, have been fabricated, in which the NPB (N,N’-Di-[(1-naphthalenyl)-N,N’-diphenyl]-(1,1’-biphenyl)-4,4’-diamine) and Alq3 (Tris-(8-quinolinolato)aluminum) act as the potential barrier layer and the potential well layer, respectively. In the electroluminescence, the blue shift of spectrum with the decreasing of well width is observed for the device with different well width, and this is interpreted by combination of quantum size effect and exciton confinement effect. The blue shift of spectrum with increasing applied voltage is observed for the same device, and this is interpreted in terms of polarization effect and quantum size effect.

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Jin-zhao Huang, Zheng Xu. Investigation of spectrum blue shift in organic quantum well electroluminescent devices. Optoelectronics Letters, 2007, 3(1): 37-39 DOI:10.1007/s11801-007-6135-y

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References

[1]

FriendR. H., GymerR. W., HolmesA. B., BurroughesJ. H., MarksR. N., TalianiC., BradleyD. D. C., Dos SantosD. A., BrédasJ. L., LÖgdlundM., SalaneckW. R.. Nature, 1999, 297: 121

[2]

SheatsJ. R., AntoniadisH., HueschenM., LeonardW., MillerJ., MoonR., RoitmanD., StockingA.. Science, 1996, 273: 884

[3]

BerniusM. T., InbasekaranM., O’BrienJ., WuW. S.. Adv Mater, 2000, 12: 1737

[4]

XiaN., Yu-linH., Kong-wuW., Fei-jianZ., Xiao-mingW., Shou-genY., Jia-chunD., SongL.. Journal of optoelectronics•laser, 2006, 17: 522

[5]

JianZ., Jian-boC., Wen-binC., GangY., QuanJ., LeiZ., HuiL.. Journal of optoelectronics•laser, 2006, 17: 295

[6]

WangJ., JiangW.-l., WeiF.-c., WangJ., HouJ.-y., LiuS.-y.. Journal of optoelectronics·laser, 2005, 16: 1036

[7]

SoF. F., ForrestS. R.. Phys Rev Lett, 1991, 66: 649

[8]

ImanishiY., HattoriS., KakutaA., NumataS.. Phys Rev Lett, 1993, 71: 2098

[9]

XieZ. Y., WongT., HuangL. S., LeeS. L.. Appl Phys Lett, 2002, 80: 1477

[10]

QiuY., GaoY. D., WangL. D., WeiP., DuanL., ZhangD. Q., DongG. F.. Appl Phys Lett, 2002, 81: 3542

[11]

LiuS. Y., YangK. X., ChenG., MaY. G.. Synthetic Materials, 2003, 137: 1105

[12]

DuanY., HouJ. Y., WuZ. J., ChengG., ZhaoY., LiuS. Y.. Chin Phys Lett, 2004, 21: 534

[13]

WuZ. J., ChenS. F., YangH. S., DuanY., ZhaoY., HouJ. Y., LiuS. Y.. Optical and Quantum Electronics, 2005, 37: 371

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