Effect of substrate porosity on photoluminescence properties of ZnS films prepared on porous Si substrates by pulsed laser deposition
Cai-feng Wang , Qing-shan Li , Li-chun Zhang , Lei Lv , Hong-xia Qi
Optoelectronics Letters ›› 2007, Vol. 3 ›› Issue (3) : 169 -172.
Effect of substrate porosity on photoluminescence properties of ZnS films prepared on porous Si substrates by pulsed laser deposition
ZnS films were deposited on porous Si (PS) substrates with different porosities by pulsed laser deposition. The photoluminescence spectra of the samples were measured to study the effect of substrate porosity on luminescence properties of ZnS/porous Si composites. After deposition of ZnS films, the red photoluminescence peak of porous Si shows a slight blueshift compared with as-prepared porous Si samples. With an increase of the porosity, a green emission at about 550 nm was observed which may be ascribed to the defect-center luminescence of ZnS films, and the photoluminescence of ZnS/porous Si composites is very close to white light. Good crystal structures of the samples were observed by x-ray diffraction, showing that ZnS films were grown in preferred orientation. Due to the roughness of porous Si surface, some cracks appear in ZnS films, which could be seen from scanning electron microscope images.
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