Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD

Nan-hui Niu; Huai-bing Wang; Jian-ping Liu; Nai-xin Liu; Yan-hui Xing; Jun Han; Jun Deng; Guang-di Shen

doi:10.1007/s11801-007-6116-1

Optoelectronics Letters ›› 2007, Vol. 3 ›› Issue (1) : 1-3. DOI: 10.1007/s11801-007-6116-1

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Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD

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Abstract

InGaN/GaN MQWs structures were grown by MOCVD. The effects of the growth interruption time on the optical and structural properties of InGaN/GaN MQWs were investigated. The experimental results show that the growth interruption can improve the interface quality, increase the intensity of photoluminescence (PL) and electroluminescence (EL); but if the interruption time was too long, the well thickness and the average In composition of MQWs decreased, and the EL intensity also decreased due to poor interface quality and impurities derived from growth interruption.

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Nan-hui Niu, Huai-bing Wang, Jian-ping Liu, Nai-xin Liu, Yan-hui Xing, Jun Han, Jun Deng, Guang-di Shen. Effects of growth interruption on the properties of InGaN/GaN MQWs grown by MOCVD. Optoelectronics Letters, 2007, 3(1): 1‒3 https://doi.org/10.1007/s11801-007-6116-1