Design of tunneling injection quantum dot lasers
Guo-zhi Jia , Jiang-hong Yao , Yong-chun Shu , Zhan-guo Wang
Optoelectronics Letters ›› 2007, Vol. 3 ›› Issue (1) : 4 -6.
Design of tunneling injection quantum dot lasers
To implement high quality tunneling injection quantum dot lasers, effects of primary factors on performance of the tunneling injection quantum dot lasers were investigated. The considered factors were tunneling probability, tunneling time and carriers thermal escape time from the quantum well. The calculation results show that with increasing of the ground-state energy level in quantum well, the tunneling probability increases and the tunneling time decreases, while the thermal escape time decreases because the ground-state energy level is shallower. Longitudinal optical phonon-assisted tunneling can be an effective method to solve the problem that both the tunneling time and the thermal escape time decrease simultaneously with the ground-state energy level increasing in quantum well
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