Temperature dependence of excitonic transition in ZnSe/ZnCdSe quantum wells

Abstract

A theoretical calculation for the temperature dependence of the excitonic transition in ZnSe/ZnCdSe quantum wells is performed. The exciton binding energy is calculated with a variational technique by considering the temperature—dependence parameters. Our results show that the exciton binding energy reduces linearly with temperature increasing. We find that the strain due to lattice mismatch and differential thermal expansion decreases with the temperature increasing.

References

[1] TamargoM. C.. II–VIsemiconductor materials and their applications, 2002, New York, Taylor & Francis Inc., 132-132

[2] MaksimovO., MartinMunoz, WangW. H.. phys. stat. sol. (b), 2004, 241: R5-R5

[3] B. Urbaszek, A. Balocchi, and C. Morhain,Exciton-phonon coupling in wide bandgap II–VIquantum wells, Proc. 25^th Int. Conf. Phys. Semicond., Osaka 2000 (Eds. Miura N. and Ando T.), 549–550.

[4] LozykowskiH. J., ShastriV. K.. J. Appl. Phys., 1991, 69: 3235-3235

[5] ZiZhengGuo, XixiaLiang, ShiliangBan. J. of Optoelectronics · Laser, 2002, 13: 1303-1303(in Chinese)

[6] ZiZhengGuo, XixiaLiang, ShiliangBan. J. of Optoelectronics · Laser, 2004, 15: 397-397(in Chinese)

[7] NithiananthiP., JayakumarK.. Int. J. Mod. Phys., 2003, 17: 5811-5811

[8] ElabsyA. M.. Physica Scripta, 1992, 46: 473-473

[9] CingolaniR., PreteP., GrecoD.. Phys. Rev. B, 1995, 51: 5176-5176

[10] SmithT. F., WhiteG. K.. J. Phys. C, 1975, 8: 2031-2031

[11] HellwegeK.-H.. Landolt-Bornstein Numerical Data and Functional Relationships in Science and Technology, 1982, Berlin, Heidelberg, New York, Springer-Verlag, 126-126

[12] WillardsonR. K., WeberE. R.High pressure in semiconductor physics ISemiconductor and Semimetal, 1998, New York, Academic Press, 273-273

[13] BanS. L., HasbunJ. E.. Eur. Phys. J. B, 1999, 8: 453-453

[14] YangP. M., RungeE., ZieglerM.. Phys. Rev. B, 1994, 49: 7424-7424