Binding energy of donors in symmetric triangular quantum wells

Ji-ye Zhang , Xi-xia Liang

Optoelectronics Letters ›› 2005, Vol. 1 ›› Issue (2) : 88 -91.

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Optoelectronics Letters ›› 2005, Vol. 1 ›› Issue (2) : 88 -91. DOI: 10.1007/BF03033674
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Binding energy of donors in symmetric triangular quantum wells

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Abstract

Hydrogen-like donor impurity states in symmetric triangular quantum wells are investigated by using a variational method. Both the effects of the variable effective mass of electrons and the spatially dependent dielectric constant are considered in the calculation. The numerical results whow that the binding energy depends on not only the effective mass and dielectric constant but also the spatial distribution of electron probability density. The binding energies of donor states get the maximums at the wellcenter. The results are also compared with those obtained in parabolic and square wells. It is seen that the triangular well support the highest binding energies for donor states.

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Ji-ye Zhang, Xi-xia Liang. Binding energy of donors in symmetric triangular quantum wells. Optoelectronics Letters, 2005, 1(2): 88-91 DOI:10.1007/BF03033674

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