Deposition of GaN thin film on ZnO/Si by DIBD method
Geng-wei Li , Shao-yan Yang , Zhi-kai Liu , Zhi-yuan Zheng
Optoelectronics Letters ›› 2006, Vol. 2 ›› Issue (4) : 282 -283.
Deposition of GaN thin film on ZnO/Si by DIBD method
The GaN thin film is successfully grown on the sample of ZnO/Si by dual ion beams deposition (DIBD) system. The thin film GaN/ZnO/Si is characterized by the in-situ X-ray photoelectron spectroscopy (XPS). It is shown that after a thin GaN film grown on the Zn/Si, the peaks of the Zn and O are not observed. This indicates that the GaN film can be successfully grown on the ZnO/Si by the dual ion beam deposition (DIBD) system associated with the pulsed laser deposition (PLD) method.
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