650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer

Wei Xia; Shu-qiang Li; Ling Wang; De-ying Ma; Xin Zhang; Fu-xun Wang; Gang Ji; Ding-wen Liu; Zhong-xiang Ren; Xian-gang Xu; Liang-mo Mei

doi:10.1007/BF03033655

Optoelectronics Letters ›› 2006, Vol. 2 ›› Issue (4) : 263 -265. DOI: 10.1007/BF03033655

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650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer

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Abstract

650 nm AlGaInP/GaInP laser diodes with compressively strained MQW active layer have been successfully fabricated by means of single epitaxy growth. The threshold current is 6.4 mA, at 40 mA CW operation, the fundamental transverse-mode still remains, and the output power and the slope efficiency can reach 34 mW and 1.1 mW/mA respectively. The dead output power in CW operation can reach 66 mW at a saturation current of 88 mA. During 200 h burn in test, the laser diodes show good stabilization with a degradation of less than 8%.

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Wei Xia, Shu-qiang Li, Ling Wang, De-ying Ma, Xin Zhang, Fu-xun Wang, Gang Ji, Ding-wen Liu, Zhong-xiang Ren, Xian-gang Xu, Liang-mo Mei. 650 nm GalnP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer. Optoelectronics Letters, 2006, 2(4): 263-265 DOI:10.1007/BF03033655

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