Transport and electroluminescence mechanism in Au/(Si/SiO₂)/P-Si film

Abstract

The samples of Au/(Si/SiO₂)/p-Si structure were fabricated by using the R. F magnetron sputtering technique. Its carrier transport and electroluminescence mechanism were studied from the I–V curves and EL spectra by using the Configuration Coordinate as a theoretical model. The result indicates that there are two defect centers in SiO₂ films., The electron in Au and the hole in p-Si went into SiO₂ film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO₂ film.

References

[1] DimariaD. J., KirtleyJ. R., PakulisE. J.. J. Appl. Phys., 1984, 56: 401-401

[2] CanhamL. T.. Appl. Phys. Lett., 1990, 57: 1046-1046

[3] XiaolongCao, QingshanLi, ShufangZhang. Journal of optoelectronics · Laser, 2004, 15: 1113-1113(in chinese)

[4] HongjianLi, ChujunZhao, zifangXie. Journal of optoelectronics · Laser, 2003, 14: 54-54(in chinese)

[5] QinG. G., LiA. P., ZhangB. R.. J. Appl. Phys., 1995, 78: 2006-2006

[6] QinShu Qi. Theory of electron tunneling, 1998, Beijing, press of science(in chinese)

[7] ChuanFang Rong. spectroscopy of solid, 2001, HeFei, press of Chinese science university(in Chinese)

[8] SkujaLN, SilnA. R.. Physica Status Solidi, 1979, A56: 495-495

[9] ProkesS. M.. Appl. Phys. Lett., 1993, 62: 3244-3244

[10] Qin Guo Gang, Jia Yong Qiang,Chinese Journal of Semiconductor, 1993,14 (in Chinese)

[11] ChenY., RanG. Z., SonY. K.. Nuclear Instrument and Method in Physics Research B, 2001, 183: 305-305

[12] Wang Yan Bin and Song yong Ke.Chinese Journal of Semiconductors,21 (2000), (in Chinese)