Characteristics of surface and interface for ITO/PTCDA/p-Si thin film device

Abstract

Interface characteristics possess very important influence on the performance of thin film devices. ITO/PTCDA/p-Si thin film device was set up with vacuum evaporation and sputter deposition method. The surface and interface electron states of ITO/PTCDA/p-Si were investigated by X-ray photoelectron spectroscopy (XPS) and argon ion beam etch techniques. Results indicate that at the interface of ITO/PTCDA/p-Si, not only ITO/PTCDA-Si but also PDCDA-Si can produce diffusion. Moreover, the XPS spectra of each atom appear chemical shifts, and the chemical shifts of Ols and Ols are more remarkable.

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