Effects of Ar ion assisted deposition on the optical and electrical characteristics of electron-beam-evaporated amorphous Si films

Abstract

In this paper, the effects of Ar ion bombardment during the electron beam evaporation deposition of the amorphous Si film were investigated. it was found that the bombardment increases the light absorption by two to eleven times and increases the conductance of the film by 3 000 times. This has never been reported before of amorphous Si with electron beam evaporation deposition.

References

[1] Martinphilip. IEEE transactions on plasma science, 1990, 18: 855-855

[2] MohanS., Ghanashyam KrishnaM.. Vacuum, 1995, 46: 645-645

[3] AhmedN. A. G.. Surface and coatings technology, 1995, 71: 82-82

[4] BittarA., TrodahlH. J., KempN. T.. Appl. Phys. Lett., 2001, 78: 619-619

[5] BergmannR. B., ZaczekC., JensenN.. Appl. Phys. Lett., 1998, 72: 2996-2996

[6] StricklandBowe, RolandChristopher. Phys. Rev. B., 1995, 51: 5061-5061

[7] Al-JumailyG. A., McNallyJ. J., McNeilJ. R.. J. Vac. Sci. Technol. A., 1985, 3: 651-651

[8] Ghanashyam KrishnaM., Narasimha RaoK., MohanS.. J. Appl. Phys., 1993, 73: 434-434

[9] ThielschR., GattoA., HeberJ., KaiserN.. Thin Solid Films, 2002, 410: 86-86

[10] AtanassovGeorge, TurloJames, FuJi Kai. Thin Solid Films, 1999, 342: 83-83

[11] TsaiRung-Ywan, ShiauSen-Chrong, LeeChii-Hua. Opt. Eng., 1998, 37: 1475-1475

[12] MartinsR.. Thin Solid Films, 2001, 383: 165-165

[13] AguasHugo. Vacuum, 2001, 60: 247-247

[14] SethTanay. Thin Solid Films, 1995, 264: 11-11