Effect of Deposition Temperature on Optical Properties of Porous Amorphous SiC Film

Abstract

To study the effect of different deposition temperatures on the optical properties of porous SiC films, single crystal Si was used as the substrate, a layer of anodic aluminum oxide (AAO) film was transferred on the Si substrate by chemical method, and then a layer of SiC was deposited on anodic aluminum oxide (AAO) template to prepare porous fluorescent SiC film by magnetron sputtering. The deposition temperature was ranged from 373 to 873 K. The thickness of the porous SiC film coated on the AAO surface was around 283 nm. It is found that the porous SiC with the deposition temperature of 873 K has the strongest photoluminescence (PL) intensity excited by 375 nm laser. The time-resolved PL spectra prove that the PL is mainly from intrinsic light emitting of SiC. With the optimized process, porous amorphous SiC film may have potential applications in the field of warm white LEDs.

Keywords

porous SiC film / fluorescent SiC / anodic aluminum oxide / magnetron sputtering / time-resolved spectrum

References

[1] Eichentopf IM, Bhm G, Arnold T. Etching Mechanisms during Plasma Jetmachining of Silicon Carbide - Science Direct[J]. Surface and Coatings Technology, 2011, 205(205): S430-S434.

[2] Todi RM, Sundaram KB, Warren AP, et al. Investigation of Oxygen Annealing Effects on RF Sputter Deposited SiC Thin Films[J]. Solid State Electronics, 2006, 50(7/8): 1189-1193.

[3] Eddy CR, Gaskill DK. Silicon Carbide as a Platform for Power Electronics[J]. Science, 2009, 324(5933): 1398-1400.

[4] Lattemann M, Nold E, Ulrich S, et al. Investigation and Characterisation of Silicon Nitride and Silicon Carbide Thin Films[J]. Surface & Coatings Technology, 2003, 174: 365-369.

[5] Roccaforte F, Fiorenza P, Greco G, et al. Emerging Trends in Wide Band Gap S emiconductors (SiC and GaN) Technology for Power Devices[J]. Microelectronic Engineering, 2017, s187–188: 66-77. (FEB.)

[6] Guillard F, Allemand A, Lulewicz J D, et al. Densification of SiC by SPS-effects of Time, Temperature and Pressure[J]. Journal of the European Ceramic Society, 2007, 27(7): 2725-2728.

[7] Neudeck PG, Okojie RS, Chen LY. High-temperature Electronics-A Role for Wide Bandgap Semiconductors?[J]. Proceedings of the Institute of Electrical and Electronics Engineers, 2002, 90(6): 1065-1076.

[8] Nakamura T, Miura M, Kawamoto N, et al. Development of SiC Diodes, Power MOSFETs and Intelligent Power Modules[J]. Physica Status Solidi, 2009, 206: 2403-2416.

[9] Wang X, Cooper JA. High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers[J]. Institute of Electrical and Electronics Engineers Transactionson Electron Devices, 2010, 57(2): 511-515.

[10] Sato S, Matsui K, Zushi Y, et al. Forced-Air-Cooled 10 kW Three-Phase SiC Inverter with Output Power Density of More Than 20 kW/L[J]. Materials Ence Forum, 2010, 679–680: 738-741.

[11] Morkoc H, Strite SS, Gao GB, et al. Large-band-gap SiC, III–V Nitride, and II–VI ZnSe-based Semiconduct or Device Technologies[J]. Journal of Applied Physics, 1994, 76(3): 1363-1398.

[12] Motoakilwaya SK, Isamuakasaki TT, Rositzayakimova MS. Fluorescent SiC and Its Application to White Light-emitting Diodes[J]. J. Semicond., 2011(1): 24–26

[13] Mitsushi Ikeda Hiroyuki, et al. Defect Luminescence in SiC Light-Emitting Diodes[J]. Japanese Journal of Applied Physics, 1980, 19(6): 1201-1201.

[14] Petrova-Koch V, Sreseli O, Polisski G, et al. Luminescence Enhancement by Electrochemical Etching of SiC(6H)[J]. Thin Solid Films, 1995, 255(1–2): 107-110.

[15] Torchynska TV, Cano AD, Sandoval SJ, et al. Photoluminescence and Ra-man Spectroscopy in Porous SiC[J]. Microelectronics Journal, 2005, 36(3/6): 536-538.

[16] Lu W, Iwasa Y, Ou Y, et al. Effective Optimization of Surface Passivation on Porous Silicon Carbide Using Atomic Layer Deposited A₂O₃[J]. The Royal Society of Chemistry Advances, 2017, 7: 8080-8097.

[17] Lu W, Ou Y, Fiordaliso EM, et al. White Light Emission from Fluorescent SiC with Porous Surface[J]. Sci-entific Reports., 2017, 7: 9 798.

[18] Kelly PJ, Arnell RD. Magnetron Sputtering: A Review of Recent Developments and Applications[J]. Vacuum: Technology Applications & Ion Physics:The International Journal & Abstracting Service for Vacuum Science & Technology, 2000, 56: 159-172.

[19] Xu D, He Z, Guo Y, et al. Fabrication of Quasi-one Dimension Silicon Carbide Nanorods Prepared by RF Sputtering[J]. Microelectron. Eng., 2006, 83: 89-91.

[20] Harriman TA, Lu DA, Lee JK, et al. Ion Implantation Effects in Single Crystal Si Investigated by Raman Spectroscopy[J]. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2009, 267: 1232-1234.

[21] Paik N. Raman and XPS Studies of DLC Films Prepared by a Magnetron Sputter-type Negative Ion Source[J]. Surface & Coatings Technology, 2005, 200(7): 2170-2174.

[22] Xiao JR, Xu H, Guo AM, et al. Study of FN-DLC Thin Films: (I) Sp Structure and Chemical Bond Analysis[J]. Acta Physica Sinica-Chinese Edition, 2007, 56(3): 1 802

[23] Wang DC, Zhang Y, Zhang YM, et al. Raman Analysis of Epitaxial Graphene on 6H-SiC (000–1) Substrates under Low Pressure Environment[J]. Journal of Semiconductors, 2011, 32(11): 113 003

[24] Feng ZC, Mascarenhas A, Choyke WJ, et al. Raman Scattering Studies for Chemical Vapor Deposited 3C-SiC Films on (100) Si[J]. J.Appl. Phys., 1988, 64(6): 3176-3186.

[25] Li Z, Zhao J, Zhang M, et al. SiC Nanowires with Thickness-controlled SiO₂ Shells: Fabrication, Mechanism, Reaction Kinetics and Photoluminescence Properties[J]. Nano Res., 2014, 7: 462-472.

[26] Morkoc H, Strite S, Gao GB, et al. Large-band-gap SiC, III–V Nitride, and II-VI ZnSe-based Semiconductor Device Technologies[J]. Journal oof Applied Physics, 1994: 76

[27] Xu SJ, Yu MB, Rusli, et al. Time-resolved Photoluminescence Spectra of Strong Visible Light-emitting SiC Nanocrystalline Films on Si Deposited by Electron-cyclotron-resonance Chemical-vapor Deposition[J]. Applied Physics Letters, 2000, 76(18): 2550-2552.

[28] Lu W, Iwasa Y, Ou Y, et al. Effective Optimization of Surface Passivation on Porous Silicon Carbide Using Atomic Layer Deposited A₂O₃[J]. The Royal Society of Chemistry Advances, 2017, 7: 8090-8097.